Composite showerhead electrode assembly for a plasma processing apparatus

ABSTRACT

A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.

BACKGROUND

Plasma processing apparatuses are used to process substrates bytechniques including etching, physical vapor deposition (PVD), chemicalvapor deposition (CVD), ion implantation, and resist removal. One typeof plasma processing apparatus used in plasma processing includes areaction chamber containing upper and bottom electrodes. An electricfield is established between the electrodes to excite a process gas intothe plasma state to process substrates in the reaction chamber.

SUMMARY

In an embodiment, a composite showerhead electrode assembly forgenerating plasma in a plasma processing apparatus is provided. Thecomposite showerhead electrode assembly includes a backing platecomprising top and bottom surfaces with first gas passages therebetween,the bottom surface having bridged and unbridged regions, the first gaspassages having outlets in unbridged regions to supply a process gas toan interior of the plasma processing apparatus, an electrode platehaving a top surface, a plasma exposed bottom surface, and second gaspassages extending therebetween and in fluid communication with thefirst gas passages, wherein the second gas passages have inlets inunbridged regions of the top surface of the electrode plate, and aninterface gel disposed between facing surfaces of at least one of thebridged regions which establishes thermal contact between the electrodeplate and the backing plate and maintains the thermal contact duringmovement in a lateral direction of the electrode plate relative to thebacking plate during temperature cycling due to mismatch of coefficientsof thermal expansion in the electrode plate and the backing plate,wherein the electrode plate is joined to the backing plate to allow thelateral movement.

In another embodiment, a method of joining components for a compositeshowerhead electrode assembly for a plasma processing apparatus isprovided. The method includes applying the interface gel to the topsurface of the electrode plate in a predetermined pattern withinbridging regions, aligning the bottom surface of a backing plate withthe top surface of the electrode plate; and attaching the top surface ofthe electrode plate to the bottom surface of the backing plate with aclamp or adhesive bond, wherein the interface gel is spread laterallyinto bridging regions between the top surface of the electrode plate andthe bottom surface of the backing plate, and the gas passages of thebacking plate are in fluid communication with the gas passages of theelectrode plate.

Another embodiment provides a method of processing a semiconductorsubstrate in a plasma processing apparatus. A substrate is placed on asubstrate support in a reaction chamber of a plasma processingapparatus. A process gas is introduced into the reaction chamber withthe composite showerhead electrode assembly. A plasma is generated fromthe process gas in the reaction chamber between the showerhead electrodeassembly and the substrate. The substrate is processed with the plasma.

In still another embodiment, an electrode plate for generating a plasmain a plasma processing apparatus, includes a top surface to be assembledto a backing plate bottom surface, a plasma exposed bottom surface, andgas passages extending therebetween; and an interface gel disposed onthe top surface in a predetermined pattern within bridging regions, thegas passages having inlets in unbridged regions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a portion of an embodimentof a composite showerhead electrode assembly and a substrate support fora plasma processing apparatus.

FIG. 1B illustrates a cross-sectional view of a portion of anotherembodiment of a composite showerhead electrode assembly and a substratesupport for a plasma processing apparatus.

FIG. 2 is a partial top view of an embodiment of an inner electrodemember, illustrating the application of an interface gel in apredetermined pattern in relation to gas passages.

FIGS. 3A-5A illustrate three-dimensional perspective views of a portionof the showerhead electrode assembly of FIG. 2, illustrating theapplication of the interface gel.

FIGS. 3B-5B illustrate cross-sectional views of a portion of theshowerhead electrode assembly of FIG. 2, illustrating the application ofthe interface gel.

FIGS. 6A and 6B show perspective and cross-sectional views respectively,of the portion of the inner electrode member of FIG. 2, illustrating theapplication of the interface gel shown in FIGS. 5A and 5B and anembodiment of a backing plate aligned to be joined to the innerelectrode member.

FIGS. 7A and 7B show cross sectional views of embodiments of theinterface gel and the interface gel and a thermally and electricallyconductive gasket between an upper electrode and a backing member.

FIGS. 8A and 8B illustrate a cross-sectional view of an embodiment of analignment fixture and an embodiment of an inner electrode member alignedto a backing plate. FIGS. 8C and 8D illustrate a cross-sectional view ofanother embodiment of an alignment fixture and an embodiment of an innerelectrode member aligned to a backing plate.

FIG. 9 shows test results for temperature variation across a showerheadelectrode assembly including an embodiment of the interface gel and thethermally and electrically conductive gasket during plasma processing ofwafers.

FIG. 10 shows tests results for temperature variation during consecutiveprocessing runs using the showerhead electrode assembly used in the testof FIG. 9.

FIG. 11 shows tests results for temperature variation during plasmaprocessing of wafers across an upper electrode of a showerhead electrodeassembly used in the test of FIG. 9 after replacement of the interfacegel and the thermally and electrically conductive gasket.

FIG. 12 shows test results for temperature variation during consecutiveprocessing runs using the showerhead electrode assembly used in the testof FIG. 11.

DETAILED DESCRIPTION

Control of particulate contamination on the surfaces of semiconductorwafers during the fabrication of integrated circuits is essential inachieving reliable devices and obtaining a high yield. Processingequipment, such as plasma processing apparatuses, can be a source ofparticulate contamination. For example, the presence of particles on thewafer surface can locally disrupt pattern transfer duringphotolithography and etching steps. As a result, these particles canintroduce defects into critical features, including gate structures,intermetal dielectric layers or metallic interconnect lines, resultingin the malfunction or failure of the integrated circuit component.

Reactor parts with relatively short lifetimes are commonly referred toas “consumables,” for example, silicon electrodes. If the consumablepart's lifetime is short, then the cost of ownership is high. Siliconelectrode assemblies used in dielectric etch tools deteriorate after alarge number of RF hours (time in hours during which radio frequencypower is used to generate the plasma). Erosion of consumables and otherparts generates particulate contamination in plasma processing chambers.

Showerhead electrode assemblies can be fabricated by joining two or moredissimilar members with mechanically compliant and/or thermallyconductive bonding materials, allowing for a multiplicity of function.The use of mechanical clamping for joining together surfaces of anelectrode assembly is described, for example, in commonly-owned U.S.Pat. No. 5,569,356, which is incorporated herein by reference in itsentirety. The use of elastomers for bonding together surfaces of anelectrode assembly is described, for example, in commonly-owned U.S.Pat. No. 6,073,577 and co-pending U.S. Provisional Pat. Appl. Nos.61/008,152 (Attorney Docket No. 1015292-000112) filed Dec. 19, 2007 and61/008,144 (Attorney Docket No. 1015292-000131) filed Dec. 19, 2007,which are incorporated herein by reference in their entirety. In theinstance of elastomeric bonds, the bonding material can containelectrically and/or thermally conductive filler particles to enhanceelectrical or thermal conductivity. Examples of methods for enhancingthermal and electrical conductivity between components of a plasmaprocessing apparatus are provided.

FIG. 1A illustrates an exemplary embodiment of a showerhead electrodeassembly 10 for a plasma processing apparatus in which semiconductorsubstrates, e.g., silicon wafers, are processed. The showerheadelectrode assembly 10 comprises a showerhead electrode including anupper electrode 12, a temperature controlled backing member 14 securedto the upper electrode 12, and a thermal control plate 16. A substratesupport 18 (only a portion of which is shown in FIG. 1A), including abottom electrode and optional electrostatic clamping electrode, ispositioned beneath the upper electrode 12 in the vacuum processingchamber of the plasma processing apparatus. A substrate 20 subjected toplasma processing is mechanically or electrostatically clamped on anupper support surface 22 of the substrate support 18.

In the illustrated embodiment, the upper electrode 12 of the showerheadelectrode includes an inner electrode member 24, and an optional outerelectrode member 30. The inner electrode member 24 is preferably acylindrical plate (e.g., a plate composed of silicon) and includesplasma-exposed bottom surface 26 and top surface 28. The inner electrodemember 24 can have a diameter smaller than, equal to, or larger than awafer to be processed (e.g., up to about 8 inches (about 200 mm) or upto about 12 inches (about 300 mm) if the plate is made of silicon). In apreferred embodiment, the showerhead electrode assembly 10 is largeenough for processing large substrates, such as semiconductor wafershaving a diameter of 300 mm or larger. For 300 mm wafers, the upperelectrode 12 is at least 300 mm in diameter and preferably about 12 to15 inches in diameter. However, the showerhead electrode assembly can besized to process other wafer sizes or substrates having a non-circularconfiguration. In the illustrated embodiment, the inner electrode member24 is wider than the substrate 20.

For processing 300 mm wafers, the outer electrode member 30 is providedto expand the diameter of the upper electrode 12 to about 15 inches toabout 17 inches. The outer electrode member 30 can be a continuousmember (e.g., a continuous poly-silicon ring), or a segmented member(e.g., including 2-6 separate segments arranged in a ring configuration,such as segments composed of silicon). In embodiments of the upperelectrode 12 that include a multiple-segment, outer electrode member 30,the segments preferably have edges, which overlap each other to protectan underlying bonding material from exposure to plasma. The innerelectrode member 24 preferably includes a pattern or array of gaspassages 32 extending through the backing member 14 for injectingprocess gas into a space in a plasma reaction chamber located betweenthe upper electrode 12 and the bottom electrode 18. Optionally, theouter electrode member 30 also includes a pattern or array of gaspassages (not shown) extending through a backing ring 36 of the backingmember 14 for injecting process gas into the space in the plasmareaction chamber located between the upper electrode 12 and the bottomelectrode 18.

Silicon is a preferred material for plasma exposed surfaces of the innerelectrode member 24 and the outer electrode member 30. Both electrodesare preferably made of high-purity, single crystal silicon, whichminimizes contamination of substrates during plasma processing and alsowears smoothly during plasma processing, thereby minimizing particles.Alternative materials that can be used for plasma-exposed surfaces ofthe upper electrode 12 include SiC or AlN, for example.

In the illustrated embodiment, the backing member 14 includes a backingplate 34 and a backing ring 36, extending around the periphery of thebacking plate 34. The backing plate 34 includes a bottom surface 38. Inthe embodiment, the inner electrode member 24 is co-extensive with thebacking plate 34, and the outer electrode member 30 is co-extensive withthe surrounding backing ring 36. However, the backing plate 34 canextend beyond the inner electrode member 24 such that a single backingplate can be used to support the inner electrode member 24 and thesegmented or continuous outer electrode member 30. The upper electrode12 is secured to the backing member 14 with fasteners such as screws ora clamp ring around the periphery, by a bonding material or the like.

Fastener members 60 are shown in the embodiment of FIG. 1A attaching theperiphery of the inner electrode member 24 to the backing plate 34. Thefastener members 60 pass through a plurality of holes 62 around theperiphery of the inner electrode member 24 and attach the innerelectrode member 24 to the backing plate 34. The outer electrode member30 preferably overlaps the periphery of the inner electrode member 24,the plurality of fastener holes 62 and the inner electrode fastenermembers 60. Outer electrode cam locks 64 secure the outer electrodemember 30 to the backing plate. Details of the cam locks are describedin commonly owned U.S. Provisional Application 61/036,862 filed Mar. 14,2008, which is incorporated herein by reference in its entirety.

Preferably a plurality of alignment pin holes 72 in the top surface 28of the inner electrode member 24 are aligned with a plurality ofcorresponding alignment pin holes 74 in the backing plate 34. Polymerpins or fasteners received in the alignment holes 72/74 can be used toalign the inner electrode member 24 to the backing plate 34. Optionallysuch alignment holes and pins (not shown) are also located in the outerelectrode member 30 and the backing ring 36 to align these components.Optionally, such alignment holes 72/74 can be aligned optically. In oneembodiment, alignment markings (not shown) can be aligned optically,where alignment holes may be undesired.

Preferably, in bridged regions 82 between the top surface 28 of theinner electrode member 24 and the bottom surface 38 of the backing plate34, an interface gel 48 is disposed. The interface gel 48 provides athermally conductive interface between the inner electrode member 24 andthe backing plate 34. Also, the interface gel can provide anelectrically conductive interface between the inner electrode member 24and the backing plate 34. The interface gel 48 provides a thermal and/orelectrical path across a gap 86 between the top surface 28 of the innerelectrode member 24 and the bottom surface 38 of the backing plate 34.Optionally, the interface gel 48 can also be disposed in a bridgedregion between the outer electrode member 30 and the backing ring 36.Preferably, a thermally and electrically conductive gasket 46 isdisposed between the outer electrode member 30 and the backing ring 36providing a thermally and electrically conductive path between the outerelectrode member 30 and the backing ring 36.

A radio frequency (RF) ring gasket 80 can be located between the innerelectrode member 24 and backing plate 34 near the outer periphery of theinner electrode member 24. The backing member 14 contains a plurality ofholes 40 adapted to receive fastener members 42 for attaching thebacking member 14 to the thermal control plate 16. Preferably, holes 40and fastener members 42 extend through the thermal control plate 16 andinto the backing member 14. The backing plate 34 also includes multiplegas passages 44 extending through the backing plate 34 and in fluidcommunication with the gas passages 32 in the inner electrode member 24.Optionally, the backing ring 36 also includes multiple gas passages (notshown) extending through the backing ring 36 and in fluid communicationwith optional gas passages (not shown) in the outer electrode member 30.

The backing plate 34 and backing ring 36 are preferably made of amaterial that is chemically compatible with process gases used forprocessing semiconductor substrates in the plasma processing chamber,and is electrically and thermally conductive. Exemplary suitablematerials that can be used to make the backing member 14 includealuminum, aluminum alloys, graphite and SiC. A preferred material forbacking plate 34 and backing ring 36 is aluminum alloy 6061 which hasnot been anodized.

In another embodiment (FIG. 1B), the inner electrode member 24 is notbonded to the backing member 14. Instead, a clamp ring 66 secures theinner electrode member 24 to the backing member 14. Preferably, thebacking member has a small step at center (not shown) to ensure centerthermal contact when clamped from edge. The clamp ring 66 is secured tothe backing member 14 by fasteners 68 passing through holes 70 in theclamp ring 66 and attaching to the backing member 14. Preferably, adielectric ring 67 is disposed between the clamp ring 66 and the innerelectrode member 24. In the embodiment illustrated in FIG. 1B, the outerelectrode member 30 overlaps the clamp ring 66, fasteners 68 and theouter periphery of the inner electrode member 24 and is attached to thebacking member 14 by a bonding material 50. Preferably, the bondingmaterial 50 is a suitable thermally and electrically conductiveelastomeric bonding material that accommodates thermal stresses, andtransfers heat and electrical energy between the outer electrode member30 and the backing ring 36. In still another embodiment, the innerelectrode member 24 can be attached to the backing member 14 by anelastomeric bonding material and the clamp ring 66, dielectric ring 67and fastener 68 can be omitted.

The interface gel can be any suitable gel material such as a polymermaterial compatible with a vacuum environment and resistant to thermaldegradation at high temperatures such as above 160° C. The interface gelmaterial can optionally include a filler of electrically and/orthermally conductive particles or other shaped filler such as wire mesh,woven or non-woven conductive fabric. Polymeric gel materials which canbe used in plasma environments above 160° C. include polyimide,polyketone, polyetherketone, polyether sulfone, polyethyleneterephthalate, fluoroethylene propylene copolymers, cellulose,triacetates and silicone.

The interface gel preferably remains a gel in the showerhead electrodeassembly during plasma generation in a plasma processing apparatus.Preferably, the gel has a semi-crosslinked structure to maintain itsposition in bridged regions. The semi-crosslinked structure while notfully cross-linked (hardened) as in an adhesive, still exhibits moreviscosity (stiffness) than a paste which is less viscous than a gel andflows more easily than the gel. In the semi-crosslinked state, theinterface gel provides a thermally and/or electrically conductiveinterface path across a gap 86 between the top surface 28 of the innerelectrode member 24 and the bottom surface 38 of the backing plate 34for the service life of the inner electrode member 24, yet does notadhesively bond the inner electrode member 24 to the backing plate 34.As such, preferably the interface gel fills surface irregularities toprovide thermally and/or electrically conductive contact while avoidingbonding the inner electrode member 24 to the backing plate 34, thusallowing separation of the inner electrode member 24 from the backingplate 34 and replacement of the inner electrode member 24 with a newinner electrode member.

Preferably, the interface gel is a thermally conductive semi-crosslinkedsilicone, thermally bridging an aluminum (Al) backing plate to a singlecrystal silicon (Si) showerhead upper electrode. In an embodiment, theinterface gel preferably comprises a thermally conductivesemi-crosslinked silicone based polymer matrix filled with Al₂O₃microspheres. In a preferred embodiment, the interface gel 48 is LambdaGel COH-4000 (available from Geltec). The contact surfaces of the upperelectrode 12, e.g., inner electrode member 24, outer electrode member30, and backing member 14, e.g., backing plate 34, backing ring 36, eachhave some degree of roughness caused by processing, e.g., machining. Theinterface gel material is preferably also soft, tacky sheet-type gelthat conducts thermal energy. Preferably, the contact surfaces arepolished and clean. The interface gel sheets preferably adhere tosurfaces with imperfections or roughness remaining after polishing anddrive out air gaps such that the gel compensates for surface roughnessof the contact surface and effectively fills regions (e.g., microvoids)of the contact surfaces to enhance thermal and/or electrical contactbetween the contact surfaces.

The thermally and electrically conductive gasket (interface gasket) 46preferably comprises a laminate of coaxial annular rings such as acentral portion sandwiched between upper and lower portions. Forexample, the central portion can be a strip of aluminum and the upperand lower portions can be strips of carbon loaded silicone.Alternatively, the interface gasket 46 is a thermal filler material suchas a silicone filled with boron nitride (such as CHO-THERM 1671manufactured by Chomerics), a graphite (such as eGraf 705 manufacturedby Graftech), an indium foil, a sandwich (such as Q-pad II byBergquist), or a phase change material (PCM) (such as T-pcm HP105 byThermagon).

The thermally and electrically conductive gasket 46 can be, for example,a conductive silicone-aluminum foil sandwich gasket structure, or aelastomer-stainless steel sandwich gasket structure. In a preferredembodiment, the gasket 145 is Bergquist Q-Pad II composite materialsavailable from The Bergquist Company, located in Chanhassen, Minn. Thesematerials comprise aluminum coated on both sides withthermally/electrically conductive rubber. The materials are compatiblein vacuum environments. The contact surfaces of the upper electrode 12,e.g., inner electrode member 24, outer electrode member 30, and backingmember 14, e.g., backing plate 34, backing ring 36, each have somedegree of roughness caused by processing, e.g., machining. The gasketmaterial is preferably also sufficiently compliant so that itcompensates for surface roughness of the contact surface and effectivelyfills regions (e.g., microvoids) of the contact surfaces to enhancethermal contact between the contact surfaces.

Preferably the bridged regions 82 containing interface gel 48 areannular zones. Also, preferably the annular zones are segmented.Preferably the bridged regions are 1 to 12 continuous or segmentedannular zones (rings) across the facing surfaces of the inner electrodemember 24 and the backing plate 34, for example, 1 to 3 annular zones, 3to 6 annular zones, 6 to 8 annular zones, 8 to 12 annular zones. FIG. 2is a top view of the inner electrode member 24, including a plurality ofcircumferential rows of gas passages 32 extending into a top surface 28.In this embodiment, the interface gel material 48 is applied as annularzone patterns between regions containing gas passages 32. However, theinterface gel 48 can be segmented, for example, between regionscontaining attachment and/or alignment holes 72. While the interface gel48 is shown as applied in annular zones, the pattern of applying theinterface gel is not limited and can be applied in other patterns suchas zones which are not annular.

Preferably the electrically and thermally conductive gasket 46 is anannular ring disposed near the periphery of the inner electrode member24 between the top surface 28 of the inner electrode member 24 and thebottom surface 38 of the backing plate 34. Also preferably, the annularring gasket 46 is disposed between the outer electrode member 30 and thebacking ring 36. Optionally, the interface gel 48 and the electricallyand thermally conductive gasket 46 can be layered between the topsurface of the upper electrode 12 and the bottom surface of the backingmember 14. For example, the interface gel 48 can be on top of theelectrically and thermally conductive gasket 46 and/or below theelectrically and thermally conductive gasket 46. More than oneelectrically and thermally conductive gasket 46 may be included in thelayer and each electrically and thermally conductive gasket 46 may haveinterface gel 48 on top of the electrically and thermally conductivegasket 46 and/or below the electrically and thermally conductive gasket46.

The interface gel can be applied to the top surface 28 of the innerelectrode member 24 in a predetermined pattern within applicationregions (Region A in FIGS. 3A and 3B) of bridging regions (Region AA).In one example, the gel 48 can be applied by rotating inner electrodemember 24 about its center point C, and applying the interface gel 48with a dispenser (e.g., a tube dispenser) by contacting one or moreoutlets of the dispenser at a single position or multiple radialpositions relative to the center point C, generating one or more annularzones at a time. In another example, the predetermined pattern can beapplied by covering the top surface 28 of the inner electrode member 24with a mask having openings in a predetermined pattern. The interfacegel can also be applied by wiping, brushing, spraying through theopenings of the mask. Examples of mask materials can include KAPTON®, apolyimide-based material, MYLAR®, a polyester-based material, orTEFLON®, a fluoropolymer resin, all available from DU PONT.

In a preferred embodiment, the interface gel is supplied betweentransfer sheets for handling. Preferably the transfer sheets are TEFLONmanufactured by DUPONT. Transfer sheets are preferred to allow, forexample, placement of the interface gel on the inner electrode member24. The interface gel is applied to the application regions (Region A)on the top surface 28 of the inner electrode member 24 by removing onetransfer sheet and applying the exposed surface of the interface gel tothe top surface 28 (FIGS. 4A and 4B). Preferably, the applied interfacegel thickness is from about 0.01 to 0.05 inches thick, more preferablyabout 0.02 to 0.04 inches thick. The other transfer sheet 52 is removed(FIGS. 5A and 5B) and the bottom surface 38 of the backing plate 34 isapplied to the top exposed surface of the interface gel 48 (FIGS. 6A and6B). The interface gel surface can be tacky and preferably, tooling canbe used to precisely remove the transfer sheets and place the sheet ofinterface gel on the surfaces.

In an embodiment, the interface gel 48 and the electrically andthermally conductive gasket 46 can be layered between the top surface ofthe upper electrode 12 and the bottom surface of the backing member 14.Preferably, the electrically and thermally conductive gasket 46thickness is from about 0.005 to 0.05 inches thick, more preferablyabout 0.008 to 0.02 inches thick, and even more preferably about 0.01 to0.014 inches thick. For example, FIG. 7A shows a cross section of theinterface gel 48 in a bridging region AA between the top surface of theinner electrode member 24 and the bottom surface 38 of the backing plate34. FIG. 7B shows a cross section example of the interface gel 48 andthe electrically and thermally conductive gasket 46 in a bridging regionAA between the top surface of the inner electrode member 24 and thebottom surface 38 of the backing plate 34. Preferably, the electricallyand thermally conductive gasket 46 includes a laminate of coaxialannular rings such as a central portion 46 b sandwiched between upperand lower portions 46 a and 46 c. For example, the central portion 46 bcan be a strip of aluminum and the upper and lower portions 46 a/46 ccan be strips of carbon loaded silicone. Preferably, compressibility ofthe electrically and thermally conductive gasket 46 is limited,requiring significantly higher forces to compress than the interface gel48. The interface gel 48 preferably compresses easily to establish athermal interface with minimal contact force. Preferably, as theinterface gel is compressed, the thermal resistance decreases. Forexample, a 0.02 inch thick interface gel compressed 30% at a compressionvelocity of 0.002 inches/min preferably has a thermal resistance ofabout 0.06° C./W.

Preferably, in an embodiment wherein the backing plate and electrode arepre-assembled, an alignment fixture (FIGS. 8A-8B) can be used to alignthe upper electrode 12 and the backing member 14. Also preferably, theinner electrode member 24 and inner backing plate 34 are pressedtogether and joined with fasteners, clamp rings, adhesive elastomericbonds or the like. The showerhead electrode assembly can be placed undera vacuum to draw out any gaps or voids under the interface gel and applya pressing load, such as by vacuum bagging or pressing in the alignmentfixture. When the plates 24/34 are pressed together the interface gelspreads laterally to fill the bridged regions (Region AA). Preferably,the interface gel 48 which bridges the gap 86 between the top surface 28of the inner electrode member 24 and the bottom surface 38 of thebacking plate 34 is from about 0.005 to 0.02 inches thick and morepreferably from about 0.009 to 0.012 inches thick in the joinedshowerhead electrode assembly.

FIGS. 8A and 8B show an embodiment of an alignment fixture 90 to join abacking member 14 to an upper electrode 12 having the interface gel 48and/or the electrically and thermally conductive gaskets 46 disposed atvarious locations between the upper electrode 12 and the backing member14.

In the embodiment shown in FIG. 8A, an upper electrode 12, such as aninner electrode member 24 is positioned on the base 106 of the alignmentfixture 90. Optionally, the inner electrode member 24 can be alignedoptically on the base by sensing alignment marks (not shown) or thelike. The alignment fixture 90 can have an alignment frame 108 to guidethe outer periphery of the backing member 14, such as the backing plate34 onto the inner electrode member 24. A press 94 of the alignmentfixture 90 can attach to the top of the backing plate by fasteners 100through fastener holes 102, suction (not shown) and/or alignment pins 96to lower the backing plate 34 onto the inner electrode member 24, suchthat guide pins 78 and/or optional alignment marks in the innerelectrode member 24 align with corresponding pin insertion holes 76and/or optional alignment marks on the backing plate 34. A handle 92 canbe automatically or manually operated to move the press 94 in thedirection of arrow F_(z) to press the aligned plates together.

FIG. 8B shows the plates 24/34 aligned with the interface gel 48 and/orthermally and electrically conducting gaskets 46 interposedtherebetween. Alignment pins 96 can be inserted in pin alignment holesin the backing plate 34 and the inner electrode member 24 to assist inalignment of the plates.

The press 94 can align the alignment holes 76 and pins 78 on the twoplates 24/34 with the interface gel 48 and/or electrically and thermallyconductive gaskets 46 disposed in bridged regions between the two platesand press the aligned plates together. Preferably, the plates 24/34 arepressed together for a predetermined time and under a predeterminedpressure to spread the interface gel. The plates can then be joined byfasteners, clamp ring, bonding or the like. For example, the backingplate 34 fastener alignment holes 74 that align with holes 72 in the topsurface 28 of the inner electrode member 24 receive fasteners (FIG. 1A)to secure the two plates 24/34 together. Optionally, the fasteners canbe omitted when an elastomeric adhesive is used to bond the alignedplates. The press 94 of the alignment fixture 90 can be detached fromthe top of the backing plate by removing fasteners 100, suction or thelike. The plates are then removed from the alignment fixture 90. In suchan embodiment, the outer electrode member 30 and/or backing ring 36 areinstalled after the plates 24/34 are removed from the alignment fixture90. For example, the plates 24/34 can be attached to the thermal controlplate 16 in the reaction chamber and the outer backing ring 36 and/orouter electrode 30 attached with fasteners, clamp rings, adhesiveelastomeric bonds or the like.

Although in the embodiment shown in FIGS. 8A and 8B the inner electrodemember 24 is on the base 106 of the alignment fixture 90 and the backingplate is above the inner electrode member 24, in another embodiment theposition of the plates can be inverted if desired. Preferably, thebacking plate 34 is attached to a thermal control plate 16 (FIG. 8C) ina plasma reaction chamber 200 having a chamber wall 202 and thealignment frame 90′ is used to align the inner electrode member 24 withthe backing plate 34. The inner electrode member 24 is then mounted tothe backing plate 34 by fasteners, clamp ring, bonding or the like.Preferably, the outer electrode member 30 is installed after thealignment frame 90′ is removed from the plates 24/34. Optionally, analignment frame can be used to align the outer electrode member 30.

In the embodiment shown in FIG. 8D, a clamp ring 66 secures the innerelectrode member 24 to the backing plate 34 after the alignment frame90′ has been removed from the backing plate 34. Optionally, the backingplate 34 has a central step to ensure alignment and improve centerthermal contact when inner electrode member 24 is clamped only from itsedge. The clamp ring 66 is secured to the backing plate 34 by fasteners68 passing through holes 70 in the clamp ring 66 and attaching to thebacking plate 34. Preferably, a dielectric ring 67 of plastic or othersuitable material is disposed between the clamp ring 66 and the innerelectrode member 24. In the embodiment illustrated in FIG. 8D, the outerelectrode member 30 overlaps the clamp ring 66, fasteners 68 and theouter periphery of the inner electrode member 24 and is attached to thebacking plate 34 by cam locks 64. Such cam locks 64 are described, forexample, in commonly-owned co-pending U.S. Provisional patentapplication Ser. No. 12/216,526 (Attorney Docket No. 1015292-000204)filed on Jul. 7, 2008, which is incorporated herein by reference in itsentirety.

The above described methods can also be used for applying the interfacegel to the bottom surface 38 of the backing plate 34. After theinterface gel is applied to at least one of the surfaces, the parts canbe assembled such that the surfaces are pressed together undercompression, or under a static weight and joined by fasteners, clampring, elastomeric adhesive bonds and the like.

During plasma processing, the electrode assemblies comprising theinterface gel and/or the electrically and thermally conductive gasketsdisposed between the upper electrode and the backing member are able tosustain high operation temperatures, high power densities, and long RFhours.

The interface gel maintains thermal contact between the upper electrode12 and the backing member 14 when the aluminum backing plate and siliconshowerhead thermally expand at different rates due to thermal cyclingduring processing. Generally, the joint, for example, the clamp ring orelastomeric adhesive, used to attach the upper electrode 12 and backingmember 14 together couples the loads between the two parts. However,when the joint is soft (low shear stress at a given strain according toan embodiment), the two parts will not induce stresses or diaphragmdeflections into each other. Preferably, the backing plate andshowerhead have a gap between non-joined areas of the two matingsurfaces to avoid rubbing of surfaces. Diaphragm deflections can causenon-bonded areas of the backing plate surface to contact and rub alongnon-bonded areas of the showerhead surface during differential thermalexpansion of the two parts. Such rubbing can wear particles off of oneor both surfaces. However, such a gap is a poor thermal conductor and toreduce the critical dimension variation in substrates during processing,control of the upper electrode temperature is desired. The interface gelprovides a thermally conductive path across the gap in bridged regionswhile allowing the lateral movement of the plates relative to oneanother.

The interface gel 48 enhances thermal transfer through the bridgedregions 82 to better control temperature of the upper electrode 12, suchthat “first wafer effects” can also be reduced during consecutiveprocessing of a series of wafers. That is, “first wafer effects” refersto secondary heating of subsequent wafers caused indirectly by theheating of the showerhead electrode during processing of thefirst-processed wafer. Specifically, upon completion of processing ofthe first wafer, the heated processed wafer and the process chamber sidewalls radiate heat toward the upper electrode. The upper electrode thenindirectly provides a secondary heating mechanism for subsequent wafersthat are processed in the chamber. As a result, the first waferprocessed by the system may exhibit a larger than desired criticaldimension (CD) variation than subsequent wafers processed by the systemsince wafer temperature variation can affect CD during etching of highaspect ratio contact vias in semiconductor substrates. Subsequentlyprocessed wafers may have different and/or less CD variation than thefirst processed wafer due to stabilization of temperature in thechamber.

Across-wafer and wafer-to-wafer temperature variation can also bepreferably reduced by enhancing thermal transfer through the bridgedregions 82 with the interface gel 48. Also, chamber-to-chambertemperature matching can be preferably achieved where multiple plasmaetching chambers in different processing lines are used for a desiredprocess or throughput, by enhancing thermal transfer through the bridgedregions 82.

A one degree Centigrade variation in wafer temperature across-wafer,wafer-to-wafer, or chamber-to-chamber, can cause a CD variation increaseat 3σ (3× standard deviation) by about 0.5 to 0.1 nm (e.g., 0.4 nm/°C.-0.2 nm/° C. or 0.35 nm/° C.-0.25 nm/° C.).

As mentioned, by using the thermally conductive interface gel 48 inbridged regions 82, after the first wafer has been processed, thetemperature of subsequently processed wafers can stabilize, such thattemperature variation of reference points on subsequently processedwafers is preferably less than about 10° C., more preferably, less thanabout 5° C., such that, for example, the CD variation can be controlledto within about 5 nm (0.5 nm/° C.×10° C.), more preferably, to withinabout 3 nm (0.3 nm/° C.×10° C.), most preferably to within about 0.5 nm(0.1 nm/° C.×5° C.) for etching high aspect ratio contact vias insemiconductor substrates.

For memory applications the CD variation is desirably less than 4 nm at3σ. With the enhanced thermal transfer through the bridged regions 82provided by the interface gel 48, the CD variation is preferably, 1 nmor less wafer-to-wafer and 4 nm or less chamber-to-chamber. For logicapplications the CD variation is desirably less than 3 nm at 3σ. Withthe enhanced thermal transfer through the bridged regions 82 provided bythe interface gel 48, the CD variation is preferably, 2 nm or lesswafer-to-wafer and 4 nm or less chamber-to-chamber.

Preferably, the interface gel 48 minimizes temperature shifts from thecenter of the electrode to the edge of the electrode by less than 10° C.and minimizes azimuthal temperature shifts to 5° C. or less. Electrodetemperature variation due to use of new or used aluminum backing membersis related to the contact surface condition of the new and used aluminumbacking members. The interface gel 48 preferably can minimize electrodetemperature shifts caused by new and used aluminum backing members toless than about 5° C. Also, parts may be removed to be cleaned and it ispreferred that a part shows the same thermal performance after suchcleaning. The interface gel 48 preferably minimizes thermal performanceshifts between before and after cleaning of the aluminum backing membersto less than about 5° C. change in electrode temperature.

The interface gel can be formulated purely with low molecular weightdimethyl silicone and optional fillers, or it can also be matrixedaround fiberglass screen (scrim), metallic screen, or mixed with glassmicrobeads and/or nanobeads of glass or other material to accommodaterequirements of various applications. Preferably, the interface gelcomprises a gel matrix material having a Si—O backbone with methylgroups (siloxane). Preferably, the interface gel is formulated with lowmolecular weight dimethyl silicone matrixed around Al₂O₃ microbeads.

In the case where the interface gel is a thermally and/or electricallyconductive gel, the thermally and/or electrically conductive fillermaterial can comprise particles of a thermally and/or electricallyconductive metal or metal alloy. A preferred metal for use in theimpurity sensitive environment of a plasma reaction chamber is analuminum alloy, aluminum oxide (Al₂O₃), silicon, silicon oxide, siliconcarbide, yttria oxide (Y₂O₃), graphite, carbon nano tubes, carbon nanoparticles, silicon nitride (SiN), aluminum nitride (AlN) or boronnitride (BN). Preferably the interface gel is easily compressible, canmaintain thermal and/or electrical contact under lateral displacement ofthe contact surfaces and has a high thermal conductivity. Preferably,the thermal conductivity is from about 0.5 W/mK to 1 W/mK, morepreferably from about 1 W/mK to 5 W/mK and most preferably at least 5W/mK.

The bridged regions can be 1 to 95% of the surface area of the facingsurfaces 28/38 of the electrode plate 24 and the backing plate 34. Forexample, the bridged region can be 1-5%, 5-10%, 10-15%, 15-20%, 20-30%,30-40%, 40-50%, 50-60%, 60-70%, 70-80%, 80-90%, or 90-95% of the surfacearea of the facing surfaces 28/38. The gas passage 32/44 openings on thefacing surfaces 28/38 are in the unbridged regions and the interface gelthermally bridges the bridged regions.

Also preferably, the backing plate bottom surface 38 is parallel to theelectrode top surface 28 with a distance between the two facing surfaces(gap) varying by less than by about +/−25 μm (0.001 in).

The backing plate 34 is attached to thermal control plate 16 by suitablefastener members described for example, in commonly-owned U.S. PatentApplication Publication No. 2007/0068629 which is incorporated herein byreference in its entirety. The backing member 34 contains a plurality ofholes 40 adapted to receive fastener members 42 for attaching thebacking member 34 to a thermal control plate 16.

EXAMPLES

Nonlimiting examples are presented of temperature testing of uppersilicon showerhead electrodes having the interface gel and theelectrically and thermally conductive gaskets disposed between the innerelectrode member and the temperature controlled aluminum backing plateduring plasma processing runs of wafers. Interface gel was located intwo concentric annular bridged zones near the center of the innerelectrode member and two concentric annular electrically and thermallyconductive gaskets were located near the outer periphery (Example 1).The two concentric annular bridged zones near the center of the innerelectrode member were at about r=1.5 inch and about r=3 inch. The twoconcentric annular electrically and thermally conductive gaskets nearthe outer periphery were at about r=4.5 inch and about r=6.25 inch.Oxide etching was performed on blanket photoresist wafers. However, anyparticular type of wafer processing apparatus or system may be adaptedfor use in any suitable wafer processing systems, including but notlimited to those adapted for deposition, oxidation, etching (includingdry etching, plasma etching, reactive ion etching (RIE), magneticallyenhanced reactive ion etching (MERIE), electron cyclotron resonance(ECR)), or the like. The plasma oxide etch tests were conducted at about6 kW total power delivered through the bottom electrode at twofrequencies of about 2500 W and 27 MHz and about 3500 W and 2 MHz. Thechamber pressure was maintained at about 45 mTorr and plasma was formedfrom process gas flowed into the chamber at about 300 sccm Ar, 18 sccmC₄F₈ and 19 sccm of O₂. The upper electrode was maintained at atemperature of about 120° C. and the lower electrode was maintained at atemperature of about 20° C. The process time was about 5 min. Theelectrically and thermally conductive gaskets were 0.012 thick BergquistQ-pad II. The interface gel was Geltech Lambda Gel COH-4000 applied 0.02inches thick. During a first process run using the upper siliconshowerhead electrode of Example 1, the upper electrode's maximum centerto edge temperature difference was 9.5° C. and the upper electrode'smaximum center to mid electrode temperature difference was 7.7° C. FIG.9 shows the test results of the temperature at the upper electrodecenter (about r=1.5 inch), mid upper electrode (about r=3 inch) and atthe upper electrode edge (about r=5 inch) locations during the first runof plasma oxide etching blanket photoresist wafers. The average upperelectrode center temperature was 171.75+/−0.75° C. The average mid upperelectrode temperature was 165.30+/−0.5° C. and the average edgetemperature was 163.50+/−0.5° C. measured during the oxide etch. A waferfault occurred on the second thermal cycle in the test and the processrun was restarted. The data from that fault cycle is shown, but was notused in the calculations.

FIG. 10 shows the temperature repeatability during consecutive processruns at the center of the upper electrode using the showerhead electrodeassembly of Example 1. The maximum center to center (during consecutiveruns) temperature difference was 1.7° C. The average center temperatureof the upper electrode during the first run (“Center”) was171.85+/−0.65° C. and the average during the second run (“Center 2”) was171.35+/−0.55° C.

The backing plate 34 was removed from the inner electrode member 24. Theinterface gel and the electrically and thermally conductive gaskets werereplaced with new gel and gasket materials as were used in Example 1 andthe showerhead electrode assembly was reassembled for further testing.FIGS. 11 and 12 show temperature variations from test results for acrossthe upper electrode and at the upper electrode center during consecutiveprocess runs with the new gel and gasket materials (Example 2). During athird process run using the upper silicon showerhead electrode ofExample 2, the upper electrode's maximum center to edge temperaturedifference was 10.1° C. and the maximum center to mid electrodetemperature difference was 6.8° C. during the oxide etching. The averagecenter temperature (“Center”) was 168.85+/−0.65° C. The average midupper electrode temperature was 163.2+/−0.50° C. and the average edgetemperature was 160.05+/−0.65° C. During a fourth oxide etching processrun using the upper silicon showerhead electrode of Example 2, averagecenter upper electrode temperature (“Center 2”) was 168.65+/−0.65 andthe maximum center temperature difference during consecutive runs was1.5° C. Table 1 summarizes some differences between test results for thetwo Examples.

TABLE 1 Difference of average value Example 1 Example 2 Example 1 − Ex.2 (° C.) (° C.) (° C.) Center 171.75 +/− 0.75 168.85 +/− 0.65 2.9 Mid165.30 +/− 0.5  163.2 +/− 0.5 2.1 Edge 163.50 +/− 0.5  160.05 +/− 0.653.45

When the word “about” is used in this specification in connection with anumerical value, it is intended that the associated numerical valueinclude a tolerance of ±10% around the stated numerical value. The termsand phases used herein are not to be interpreted with mathematical orgeometric precision, rather geometric terminology is to be interpretedas meaning approximating or similar to the geometric terms and concepts.Terms such as “generally” and “substantially” are intended to encompassboth precise meanings of the associated terms and concepts as well as toprovide reasonable latitude which is consistent with form, function,and/or meaning.

While the invention has been described in detail with reference tospecific embodiments thereof, it will be apparent to those skilled inthe art that various changes and modifications can be made, andequivalents employed, without departing from the scope of the appendedclaims.

1. (canceled)
 2. The method of claim 23, wherein the interface gel iselectrically conductive.
 3. The method of claim 23, wherein theelectrode plate is joined to the backing plate by a clamping memberengaging an outer edge of the electrode plate and resiliently pressingthe electrode against the backing plate, wherein a thermally andelectrically conductive gasket is interposed between the clamping memberand the backing plate.
 4. The method of claim 23, wherein the electrodeplate is joined to the backing plate by an elastomeric adhesive bond. 5.The method of claim 23, wherein the backing plate comprises an innerbacking plate and an outer backing ring, the outer backing ringsurrounding the inner backing plate, wherein the first gas passages arein the inner backing plate and optionally in the outer backing ring, theelectrode plate comprises an inner showerhead electrode joined to theinner backing plate and an outer ring electrode joined to the outerbacking ring, wherein the second gas passages are in the innershowerhead electrode and optionally in the outer ring electrode.
 6. Themethod of claim 5, wherein (a) the surfaces of the inner backing plateand showerhead electrode facing one another are parallel to each otherand/or (b) the electrode plate is of single crystal silicon,polycrystalline silicon, graphite or silicon carbide; and the backingplate is of aluminum, graphite, or silicon carbide.
 7. The method ofclaim 23, further comprising at least one thermally and electricallyconductive gasket disposed between the electrode plate and backing platesurfaces in at least one bridged region.
 8. The method of claim 7,wherein the interface gel comprises first and second continuous orsegmented rings between facing surfaces at two inner bridged regions andthe at least one thermally and electrically conductive gasket comprisesfirst and second continuous or segmented rings between the facingsurfaces at two outer bridged regions.
 9. The method of claim 7, whereinthe thermally and electrically conductive gasket comprises two or morelaminated layers having different physical properties.
 10. The method ofclaim 7, wherein at least one portion of the interface gel and gaskethas a thermal conductivity between the electrode plate and backing platesurfaces of 0.5 W/mK to 1 W/mK, 1 W/mK to 5 W/mK and/or over 5 W/mK. 11.The method of claim 23, wherein the interface gel comprises a siliconebased composite, a low molecular weight siloxane and a uniformdistribution of thermally conductive filler, or a combination thereof.12. The method of claim 11, wherein the thermally conductive filler isone of boron nitride (BN), aluminum oxide (Al₂O₃), silicon, siliconcarbide, and a combination thereof.
 13. The method of claim 23, whereina gap distance between the bridged regions of facing surfaces of thebacking plate and electrode plate varies by less than ±25 μm (0.001 in).14. The method of claim 23, wherein (a) the interface gel is a sheetmaterial; (a) the bridged regions comprise: 1 to 3 continuous orsegmented annular zones, 3 to 6 continuous or segmented annular zones, 6to 8 continuous or segmented annular zones, or 8 to 12 continuous orsegmented annular zones; and/or (b) the bridged regions comprise: 1-5%,5-10%, 10-15%, 15-20%, 20-30%, 30-40%, 40-50%, 50-60%, 60-70%, 70-80%,80-90%, or 90-95% of the surface area of the facing surfaces of theelectrode plate and the backing plate.
 15. (canceled)
 16. (canceled) 17.(canceled)
 18. (canceled)
 19. (canceled)
 20. (canceled)
 21. (canceled)22. (canceled)
 23. A method of processing a semiconductor substrate in aplasma processing apparatus, the method comprising: placing a substrateon a substrate support in a reaction chamber of a plasma processingapparatus; introducing a process gas into the reaction chamber with acomposite showerhead electrode assembly comprising: a backing platecomprising top and bottom surfaces with first gas passages therebetween,the bottom surface having bridged and unbridged regions, the first gaspassages having outlets in unbridged regions to supply a process gas toan interior of the plasma processing apparatus; an electrode platehaving a top surface, a plasma exposed bottom surface, and second gaspassages extending therebetween and in fluid communication with thefirst gas passages, wherein the second gas passages have inlets inunbridged regions of the top surface of the electrode plate; and aninterface gel disposed between facing surfaces at each of the bridgedregions which establishes thermal contact between the electrode plateand the backing plate and maintains the thermal contact during movementin a lateral direction of the electrode plate relative to the backingplate during temperature cycling due to mismatch of coefficients ofthermal expansion in the electrode plate and the backing plate; whereinthe electrode plate is joined to the backing plate to allow themovement; generating a plasma from the process gas in the reactionchamber between the composite showerhead electrode assembly and thesubstrate; processing the substrate with the plasma.
 24. The method ofclaim 23, wherein the processing comprises plasma etching the substrate.25. (canceled)
 26. (canceled)